EE-SX910-R Photoelectric Switch NEW

Type

Standard

L-shaped

F-shaped

R-shaped

U-shaped

NPN models

Pre-wired models

EE-SX910-R

EE-SX911-R

EE-SX912-R

EE-SX913-R

EE-SX914-R

PNP models

Pre-wired models

EE-SX910P-R

EE-SX911P-R

EE-SX912P-R

EE-SX913P-R

EE-SX914P-R

Sensing distance

5 mm (slot width)

Sensing object

Opaque: 1.2 × 0.8 mm min.

Differential distance

0.025 mm max. *1

Light source

GaAs infrared LED with a peak wavelength of 940 nm

Indicator

Light indicator (orange LED)

Supply voltage

5 to 24 VDC ±10%, ripple (p-p): 10% max.

Current consumption

21 mA max.

Control output

Load power supply voltage: 5 to 24 VDC

Load current: 50 mA max.

OFF current: 0.5 mA max.

50 mA load current with a residual voltage of 1.0 V max.

5 mA load current with a residual voltage of 0.4 V max.

Protection circuits

Power supply reverse polarity protection; output reverse polarity protection

(only OUT2 on models with NPN output)

Response frequency

1 kHz min. (3 kHz average) *2

Ambient illumination

1,000 lx max. with fluorescent light on the surface of the receiver

Ambient temperature range

Operating: -25 to 55°C

Storage: -30 to 80°C (with no icing or condensation)

Ambient humidity range

Operating: 5% to 85%

Storage: 5% to 95% (with no icing or condensation)

Vibration resistance (Destruction)

10 to 2,000 Hz (peak acceleration: 150m/s2)

0.75-mm single amplitude for 2.5 h (15-min periods, 10 cycles) each in X, Y, and Z directions

Shock resistance (Destruction)

500 m/s2 for 3 times each in X, Y, and Z directions

Degree of protection

IEC60529 IP50

Connecting method

Pre-wired Models (standard cable length: 1 m)

Weight

Pre-wired Models

Approx. 17 g

(packed state)

Materials

Case/cover

Polybutylene phthalate (PBT)

Emitter/receiver

Polycarbonate (PC)