EE-SX871A Photoelectric Switch NEW

Type

Standard

L-shaped

T-shaped

NPN models

EE-SX770/EE-SX870

EE-SX771/EE-SX871

EE-SX772/EE-SX872

EE-SX770A/EE-SX870A

EE-SX771A/EE-SX871A

EE-SX772A/EE-SX872A

PNP models

EE-SX770P/EE-SX870P

EE-SX771P/EE-SX871P

EE-SX772P/EE-SX872P

EE-SX770R/EE-SX870R

EE-SX771R/EE-SX871R

EE-SX772R/EE-SX872R

Sensing distance

5 mm (slot width)

Sensing object

Opaque: 2 × 0.8 mm min.

Differential distance

0.025 mm

Light source

GaAs infrared LED with a peak wavelength of 940 nm

Indicator

Light indicator (red) (turns ON when light is interrupted for models with A or R suffix)

Supply voltage

5 to 24 VDC ±10%, ripple (p-p): 10% max.

Current consumption

35 mA max. (NPN models), 30 mA max. (PNP models)

Control output

NPN open collector:

5 to 24 VDC, 100 mA max.

100 mA load current with a residual voltage of 0.8 V max.

40 mA load current with a residual voltage of 0.4 V max.

OFF current (leakage current): 0.5 mA max.

PNP open collector:

5 to 24 VDC, 50 mA max.

50 mA load current with a residual voltage of 1.3 V max.

OFF current (leakage current): 0.5 mA max.

Response frequency *

1 kHz min. (3 kHz average)

Ambient illumination

1,000 lx max. with fluorescent light on the surface of the receiver

Ambient temperature range

Operating: - 25 to +55 ° C

Storage: - 30 to +80 ° C (with no icing)

Ambient humidity range

Operating: 5% to 85%

Storage: 5% to 95% (with no condensation)

Vibration resistance

Destruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2)

1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions

Shock resistance

Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions

Degree of protection

IEC60529 IP60

Connecting method

Pre-wired (standard cable length: 2 m)

Weight (packaged)

Approx. 20 g

Material

Case: Polybutylene phthalate (PBT)